128Gbit memory chip adopting new technology Intel and Micron Technology announced on July 28, 2015 that they have developed the "3D XPoint technology," which Intel calls "a breakthrough that has been achieved more than 25 years since the adoption of NAND flash memory in 1989." The two companies have used this technology to develop chips with a capacity of 128 Gbits that are more common in NAND flash memory. It is expected to be mainly used to fill the "Storage-Class Memory" of the performance gap between DRAM and NAND flash memory. According to the release document, 3D XPoint is a kind of non-volatile memory, but it does not disclose the principle of information recording. With a cross-point configuration in which word lines and bit lines are combined in a three-dimensional shape, selectors and memory cells are arranged at intersections of wires. This configuration, like a passive display, allows reading and writing of each memory cell without the use of a transistor. In terms of performance, the two companies emphasized that in some respects they have reached 1,000 times the NAND flash memory. Specifically, the speed is 1000 times that of NAND flash, and the number of erasures is also 1000 times that of NAND flash. The density of memory cells is more than 10 times that of the prior art. Phase Change Nonvolatile Memory The publication does not clearly state what "speed" specifically refers to. If it is an access time at the time of writing, since the speed of the NAND flash memory is very slow in the storage technology, even if it is 1000 times, it will not exceed the existing non-volatile memory technology other than the DRAM and the NAND flash memory. . In addition, the rewritable number of NAND flash memories is about 105 to 6 times, which is the lowest among various storage technologies. If the new product reaches 108 to 9 times its 1000 times, the reliability will be greatly improved. However, as a non-volatile memory technology, this performance is not particularly good. The above performance values ​​and cross-point configurations are the closest to the non-volatile memory called "Phase Change Memory" (PCRAM, or PCM) in existing non-volatile memories. IBM and others are also advancing the development of three-dimensional PCRAM with cross-point configuration. (Reporter: Nozawa Tetsuo) Solar cells use sunlight to generate electricity. As long as the sun shines on the battery, it will continue to generate electricity. It is a clean energy with the advantages of safety, reliability, no noise and no consumption of raw materials. It has the advantages of great convenience for residents in remote areas. So what is the working principle of solar energy? Today we'll explore it. Solar cell is a device that directly converts light into electric energy through photochemical effect. When sunlight shines on the semiconductor pn junction, a new hole (electron pair) is formed. Under the action of the electric field, the hole flows from the N region to the p region, and the electron flows from the p region to the N region. After the circuit is connected, a current is formed to convert light energy into electric energy.Solar panel, also known as solar cell module, is a kind of photoelectric semiconductor sheet that uses sunlight to directly generate electricity. It is an assembly composed of several solar cells assembled on a plate in a certain way. It is the core part of the solar power generation system.The earth, the green home for human survival. Photovoltaic System,Solar panels,Solar controller,High power inverter,Household solar panel,Monocrystalline silicon solar panel Rugao Yaou Import & Export Trade Co., Ltd , https://www.ntyaous.com
With the development of human civilization, it has gradually become a victim of economic growth. Clean energy is imminent.
The sun concentrates 99.87 percent of the mass of the solar system, and one twenty-two percent of the energy radiates to the earth, becoming the main source of photosynthetic heat on the earth. Solar energy is one of the cleanest, most lasting and most magical energy of all.