Bosch Solar Energy and Solar Energy Research Hamelin (ISFH) in Germany successfully produced a crystalline silicon solar photovoltaic cell with a conversion efficiency of 22.1%. The solar cell uses ion implantation to cross Back knot contact (IBC) technology.

This is the result of the joint development project of Bosch Solar Energy and Hamelin Solar Energy Research Institute using IBC technology. The peak power of this near square 156mm photovoltaic cell has reached 5.32 watts, which is the highest power announced by single crystal silicon photovoltaic cells, both of which are expected to achieve higher output power through the application of this technology.

The Bosch Solar and Hamelin Institute of Solar Energy stated in a statement that IBC cells are an attractive concept for future solar cells because the front-end metallization avoids optical losses and the back-end metallization can be completely No silver.

Through the application of novel and intelligent component interaction concepts, the significant advantages of IBC cells have been fully tapped: high voltage, ultra-high current density, and aesthetic appearance.

Ion Implants Simplify and Reduce IBC Technology Costs

Bosch Solar and Hamelin Solar Institute further pointed out that although the process steps of IBC cells are more complex, ion implantation can greatly simplify the production process.

Both parties pointed out that only one high-temperature step is required. Due to the simplification of the production process, ion implantation technology can significantly reduce the cost structure of IBC cells.

Process used

In addition, Bosch Solar and Hamelin Solar Institute announced that they can use standard industrial technologies and equipment to develop these cells instead of using laboratory methods. In addition, this cell is based on an n-type wafer using the standard Czochralski method.

The efficiency of this cell can reach 2.1%, open circuit voltage is 676mV, short circuit current density is 51.6mA/cm2 and 78.5% fill factor. The two agencies pointed out that they believe that the open circuit voltage and fill factor have the potential for further improvement.

The research project was supported by Applied Materials Inc., an ion implant manufacturer headquartered in Santa Clara, California. (Compiled by Tao Shuhua)

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