Compared with Samsung, Toshiba, and Micron, China’s DRAM memory and NAND flash memory are lagging behind for many years. However, Chinese researchers have also been chasing the latest generation of technology. It was reported recently that China’s investment in PCM production was 13 billion yuan. Change memory, the performance is 1,000 times that of ordinary memory chips, and now it comes more powerfully - the team led by Zhang Wei and Zhou Peng led by Fudan University Microelectronics Institute developed a new two-dimensional non-volatile memory chip. Using a semiconductor structure, the developed memory chip has excellent performance, which is 1 million times that of conventional two-dimensional memory chips, and the performance is longer. The refresh time is 156 times that of memory, which means that it has stronger durability. DIY players should know the advantages and disadvantages of memory and flash memory - memory speed is fast, but data loss occurs when the power is turned off, and the cost is high. The flash memory delay is one order of magnitude higher than the memory, but the advantage is that it can save data, and at the same time, the cost is higher. Low, so the industry has been looking for a memory chip that can simultaneously have the advantages of memory and flash memory, that is, it can save data at the same time with extremely fast speeds. The 3D XPoint flash memory developed by Intel has similar characteristics. It is said that the performance is 1,000 times that of flash memory and the durability is 1000 times that of flash memory. The PCM phase-change memory mentioned in the previous news is also a similar technology that can save data while power is off. Performance is similar to memory, but these new memory chips have not yet reached the point where memory and flash memory are mature. Memory chips developed by Chinese scholars are also in this direction. According to their papers published in the magazine “Nature·Nanometer Technology,†they developed memory chips that use FETs that are not conventional chips because the latter is in physical size. In the case of gradually shrinking, quantum interference will be encountered. So Zhang Wei and Zhou Peng’s team used a semi-floating gate transistor technology. They showed a Van der Waals heterostructure. Nearly non-volatile semi-floating gate structure, this new type of memory chip has excellent performance and durability. Specifically, compared with DRAM memory, its data refresh time is 156 times that of the former, that is, it can hold longer data, and at the same time, it has a write speed of nanosecond (ns) level. (The delay of NAND flash memory is generally In milliseconds), it is one million times faster than conventional two-dimensional materials. , so this new type of memory is expected to narrow the gap between traditional memory and flash memory. Of course, this technological progress is still very good, but do not expect technology to be mass-produced soon, and it is even more unlikely that it will enter the market in the next two or three years. However, new types of memory chips with the advantages of both DRAM and NAND have this problem and have not matured. Mass production goes to the point where traditional memory and flash memory have a long life. Welded WIRE MESH fence is a type of fencing made from steel wires arranged in a grid or mesh pattern. This type of fence is known for its strength and durability, making it an ideal choice for high-security areas. The wires are welded at each intersection to increase the fence's strength and resistance. Welded Wire Mesh Fence,Welded Wire Fence,Pvc Coated Wire Mesh,Welded Mesh Fencing Hebei Aibuer trading co., Ltd , https://www.ablewiremesh.com
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